tsm2n7002k 60v n-channel mosfet 1/7 version: c11 sot - 23 sot - 323 features low on-resistance esd protected 2kv high speed switching low voltage drive ordering information part no. package packing tsm2n7002kcx rf sot-23 3kpcs / 7 reel tsm2n7002kcx rfg sot-23 3kpcs / 7 reel tsm2n7002kcu rf sot-323 3kpcs / 7 reel tsm2n7002kcu rfg sot-323 3kpcs / 7 reel note: g denotes for halogen free absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v drain current continuous @ t a =25oc i d 300 ma pulsed i dm 800 drain reverse current continuous @ t a =25oc i dr 300 ma pulsed i dmr 800 maximum power dissipation p d 300 mw operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg -55 to +150 o c thermal performance parameter symbol limit unit lead temperature (1/8 from case) t l 5 s junction to ambient thermal resistance (pcb mounted ) r ? ja 350 o c/w notes: a. pulse width 300us, duty cycle 2% b. when the device is mounted on a glass epoxy boar d with area measuring 1 x 0.75 x 0.62 inch. c. the power dissipation of the package may result in a continuous drain current. block diagram n-channel mosfet pin definition : 1. gate 2. source 3. drain product summary v ds (v) r ds(on) ( ) i d (ma) 60 2 @ v gs = 10v 300 4 @ v gs = 4.5v 200
tsm2n7002k 60v n-channel mosfet 2/7 version: c11 electrical specifications (ta = 25 o c, unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs =0v, i d =250a bv dss 60 -- -- v gate threshold voltage v ds =v gs , i d =250a v gs(th) 1.0 1.5 2.5 v gate body leakage v gs =20v, v ds =0v i gss -- -- 10 ua zero gate voltage drain current v ds =60v, v gs =0v i dss -- -- 1.0 ua drain-source on-state resistance v gs =10v, i d =300ma r ds(on) -- 1.2 2 v gs =4.5v, i d =100ma -- 2 4 forward transconductance v ds =10v, i d =200ma g fs 100 -- -- ms diode forward voltage i s =300ma, v gs =0v v sd -- 0.8 1.4 v dynamic b total gate charge v ds =10v, i d = 250ma, v gs =4.5v q g -- 0.4 0.6 nc input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 30 -- pf output capacitance c oss -- 6 -- reverse transfer capacitance c rss -- 2.5 -- switching c turn-on delay time v dd =30v, r g =10 i d =200ma, v gen =10v, t d(on) -- -- 25 ns turn-off delay time t d(off) -- -- 35 notes: a. pulse test: pw 300s, duty cycle 2% b. for design aid only, not subject to production t esting. c. switching time is essentially independent of ope rating temperature.
tsm2n7002k 60v n-channel mosfet 3/7 version: c11 electrical characteristics curve (ta = 25 o c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage
tsm2n7002k 60v n-channel mosfet 4/7 version: c11 electrical characteristics curve (ta = 25 o c, unless otherwise noted) on-resistance vs. gate-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to -ambient
tsm2n7002k 60v n-channel mosfet 5/7 version: c11 sot-23 mechanical drawing marking diagram sot-23 dimension dim millimeters inches min max min max. a 1.00 bsc 0.039 bsc a1 -- 0.10 -- 0.004 bp 0.37 0.42 0.014 0.016 c 0.15 0.09 0.005 0.004 d 2.80 3.00 0.110 0.118 e 1.20 1.40 0.047 0.055 e 1.9 bsc 0.075 bsc e1 0.95 bsc 0.037 bsc h e 2.35 2.45 0.093 0.096 l p 0.15 0.45 0.005 0.018 q 0.45 0.55 0.018 0.022 v 0.2 bsc 0.007 bsc w 0.1 bsc 0.004 bsc
tsm2n7002k 60v n-channel mosfet 6/7 version: c11 sot-323 mechanical drawing marking diagram sot-323 dimension dim millimeters inches min max min max a 0.80 1.10 0.031 0.043 a1 -- 0.10 -- 0.004 bp 0.30 0.40 0.012 0.016 c 0.10 0.25 0.004 0.010 d 1.80 2.20 0.071 0.087 e 1.15 1.35 0.045 0.053 e 1.30 bsc 0.051 bsc e1 0.65 bsc 0.026 bsc h e 2.00 2.20 0.079 0.087 lp 0.15 0.45 0.006 0.018 q 0.20 bsc 0.007 bsc w 0.20 bsc 0.007 bsc
tsm2n7002k 60v n-channel mosfet 7/7 version: c11 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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